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Sensors and Actuators B 130 (2008) 70–76
TiO
2
nanowires array fabrication and gas sensing properties
L. Francioso
∗
, A.M. Taurino, A. Forleo, P. Siciliano
CNR-IMM Institute for Microelectronics and Microsystems, S.P. per Monteroni, Lecce University Campus, CNR Area, 73100 Lecce, Italy
Available online 25 July 2007
Abstract
A cheap nanofabrication process for titania (TiO
2
) polycrystalline nanowire array for gas sensing applications with lateral size ranging from 90
to 180 nm, and gas sensing characterizations are presented. Alternatively to typical pattern transfer techniques for submicron fabrication, authors
focused on a standard 365 nm UV photolithographic process able to fabricate sol–gel nanostructured titania nanowires from a solid thin film. Main
aim of present work is the experimental validation of enhanced gas sensing response of nanopatterned metal oxide thin film sensors. Two different
kinds of gas sensor with nanopatterned sensitive area have been realized onto silicon substrates and tested towards different EtOH concentrations;
experimental tests have been carried out with a contemporary output signals collection from a nanowires-based gas sensor and a second device
with solid sensitive film without patterning, in order to validate effects of nanomachining on sensitive material response.
© 2007 Elsevier B.V. All rights reserved.
Keywords: Metal oxide nanowires; TiO
2
; Nanometric patterning; Response enhancement
1. Introduction
During last years, nanostructures like nanowires and
nanobelts (i.e., one-dimensional structures) constitute a novel
class of functional materials that have recently gained consid-
erable attention from R&D community due to their potential
about development of innovative smart devices and systems.
Impressive and promising results regarding the synthesis, fabri-
cation, and physical properties of these nanostructureshave been
just achieved [1–3]. Electrical properties of such nanostructures
dependent on high aspect ratio of the structure may be easily
modified by addition of small amounts of dopants. This topic
is well illustrated, for example, by diffusion of boron or phos-
phorous in silicon nanowire in order to modulate the electron
or hole concentration, respectively [4]. Among semiconductors,
also functional metal oxides can be synthesized in controlled
conditions as 1-D nanostructures that, showing electrical trans-
port properties characterized by a strong carrier confinement,
gain an high significance in several scientific and technologi-
cal applications [5–8]. Metal oxides 1-D nanostructures, may be
promising gas-sensing materials because their very high surface-
to-volume ratio; they are single crystalline (so expected to be
∗
Corresponding author.
E-mail address: luca.francioso@le.imm.cnr.it (L. Francioso).
more stable), identical crystalline faces exposed to gases, and
the nanosize is likely to allow a complete depletion from charge
carriers [9–13]. Hence, they can be used for miniaturized highly
sensitive chemical sensors [14–18]. The development of tech-
niques for rapid electrical testing and reproducible integration
of these materials into working sensors may result an enabler
for a wide variety of nanotechnology research. The scientific
community actually follows different approaches in order to
synthesize functional oxides nanostructures, and mainly chemi-
cal route techniques or nanoporous templates-based techniques
seem to be best candidates [19–21].
Present work applies a cheap and custom nanopatterning
process to fabrication of nanomachined metal oxide thin film
gas sensors, looking for an experimental validation of enhanced
gas sensing response towards different concentrations of EtOH
in comparison to standard thin film sensors made of identical
TiO
2
polycrystalline sensitive thin film. A preliminary prototype
device has been fabricated with a platinum gap microelec-
trodes, deposited over about 3500 titania nanowires patterned
onto oxidized silicon substrate. Subsequently, an enhanced lay-
out of silicon miniaturized gas sensor, with embedded heater
and thermometer have been also realized and tested in two dif-
ferent typologies: a former typology presents standard solid
sensitive titania film and the latter one characterized by tita-
nia nanowire array as sensitive area. Sensitive metal oxide films
of all tested devices has been synthesized in a single process
0925-4005/$ – see front matter © 2007 Elsevier B.V. All rights reserved.
doi:10.1016/j.snb.2007.07.074
L. Francioso et al. / Sensors and Actuators B 130 (2008) 70–76 71
and deposited onto same substrate. A custom photolithographic
mask set allows the fabrication of solid and nanopatterned area
gas sensors in a single photolithographic step; performance of
tested devices and effects of patterned sensitive area will be dis-
cussed. In the next sections, fabrication details and controlled
environment gas sensing test will be presented for both devices
(prototype and enhanced layout sensor).
2. Experimental
The engineering of a cheap nanometric structures fabrica-
tion run onto silicon substrates has been defined considering
fabrication challenge of submicron structures of metal oxide
gas sensitive materials only implementing standard 365 nm UV
lithography and dry plasma etching. The process, successfully
completed, yields fabrication of TiO
2
nanowires large array
over silica mesa, characterized by wires’ width ranging from
90 to 180 nm. The nanopatterning process has been applied for
fabrication of both prototype device and enhanced layout one,
described below in detail. Hard control of sensitive film thick-
ness and resist mask uniformity onto silicon substrate represents
main points responsible for a successful fabrication. The pro-
cess starts with the deposition by sol–gel route of a thin layer of
undoped titania metal oxide following experimental procedure
described elsewhere [22]; previous structural characterizations
of these metal oxide films by X-ray diffraction (XRD) showed
that, after the calcination step at 500
◦
C for 1 h, the lattice sta-
bilizes to anatase phase. The spinning process was carried out
onto a full 3 inch (1 0 0)-oriented silicon wafer, thermally oxi-
dized up to 400 nm of grown oxide; the sol–gel solution was
spun statically onto wafer before spinnerrotation at 2000 rpm for
30 min. Sensitive film before final high temperature firing is still
amorphous and characterized by poor sensitiveness to gaseous
environment; so a final calcination step was carried out at 500
◦
C
to obtain fully crystallized film to anatase phase. Calcined films
become inert to strong acid and the deposition of a polymeric
matrix (photoresist) onto this calcinated films does not affect its
gas sensing properties as well. At this point the fabrication step
is described by first picture of Fig. 1, depicting silicon wafer
with annealed film on top. Subsequently, a thin layer of positive
photoresist (S1805 from Shipley) was spun onto film surface to
define a resist mask with typical strip array structures 500 nm
width and 800 nm of pitch between two strips. Spinner rotation
was set to 4500 rpm and the resist thickness obtained was about
400 nm after soft-bake step onto hotplate at 115
◦
C for 120 s.
Defined the suitable resist mask described above, high pres-
sure plasma in a Oxford Plasmalab 80 RIE reactor has been
adopted to perform micromachining of titania thin films; the
identification of process parameters for heavy isotropic etching,
was oriented towards a total process pressure of 200 mTorr and
SF
6
chemistry; to limit photoresist damage and increase selec-
tivity, only SF
6
was introduced in the chamber during discharge,
40 sccm total flow, and a RF power density applied to aluminium
reactor plate of about 1.5 W/cm
2
. Preliminary etching rate cal-
ibration, showed that titania thin films are fastly etched and a
suitable etching time of about 390 s gave optimal results. Typical
SEM pictures of titania nanowires array is reported in Fig. 2.
Afterwards realization of titania nanowire array, became
challenging electrical properties investigation of patterned mate-
rial as nanowires conducting paths, by means of electrical
contacts deposited between ends of nanowires connected in
parallel, about 100 m spaced and deposited over about 3500
nanowires (metal paths across three different patterned areas).
Fig. 3 shows prototype layout adopted for preliminary gas sens-
ing tests for this innovative structure; silicon substrate was
connected with gold wires bonded on platinum paths deposited
Fig. 1. Nanowire array fabrication process.
72 L. Francioso et al. / Sensors and Actuators B 130 (2008) 70–76
Fig. 2. SEM images of TiO
2
nanowires onto silica mesa (×4500); inset
(×90,000).
over thermal oxide, outside sensitive areas; this device has been
heated at operative temperature (500
◦
C) onto a resistive ceramic
plate and exposed to EtOH injection on dry air carrier. Further
physical details of this prototype are reported in Table 1. About
fabrication of second kind of sensor, the layout of enhanced
gas sensor device, with embedded platinum heater and ther-
Table 1
Physical parameters of prototype sensor nanowires array
Parameters Values
Single nanowire width (nm) 90–180
Single nanowire length (m) 1400
Single nanowire thickness (nm) 50
Nanowires length between biased electrodes (m) 100
Total measured nanowires (100 m) in parallel ≈3500
mometer is depicted in Fig. 4; the device is characterized by
1.5 mm × 1.5 mm size (right side of picture), 350 m thick sil-
icon die, 10 m pitch electrodes, 5 V maximum power supply
and 440 m × 440 m active area; it requires only 200 mW at
350
◦
C with an heater resistance of 20 at room temperature.
The fabrications process needs only two mask levels and
allows batch fabrication of about 1000 chips for a single 3 min
silicon wafer. The fabrication process is identical to previous
prototype device: in fact, after spinning and firing of sensitive
film, a dry etching performs the patterning of sensors’ sensitive
areas, both for nanowires-based sensors and solid film-based
ones. For these samples, nanowires structures present maximum
width of about 180–200 nm, measured with the support of our
JEOL JSM 6500 SEM-FEG software measuring tools. Fabri-
cated devices have been diced and packaged on a 10-pin TO-5
socket for controlled environment characterizations (Fig. 4, left
Fig. 3. Optical microscope images of metal contacts configuration on prototype sensor: darker area is the nanowire array while electrical platinum contacts are visible
as bright paths. Square pads on top are 100 m × 100 m.
Fig. 4. Digital pictures of enhanced layout packaged gas sensor (left) and front side view of 1.5 mm × 1.5 mm sensor structure (right).
L. Francioso et al. / Sensors and Actuators B 130 (2008) 70–76 73
side), carried out in a 120 cm
3
volume stainless steel cham-
ber, 200 sccm dry air carrier constant flow and PC-controlled
acquisition bench facility. Further test bench details are reported
elsewhere [23].
3. Results and discussion
Working principles of developed chemoresistive gas sensors
involve chemiadsorption and charge transfer processes between
the gas molecules and metal oxide (MOX) film, which cause a
simple electrical resistance variation of the gas sensing element,
hence, they are characterized by a real functioning easiness.
Basically, the effects of the microstructure, namely, the porosity
in the packing of the metal oxide particles, the large interface-to-
volume ratio, the grain size and more specifically the ratio of the
grain size to the Debye length (L
D
) are well recognized param-
eters which control the electrical conduction properties and the
gas sensing mechanism. If the size d of the nanocrystalline parti-
cles is so low (d < L
D
) that the grains are completely depleted and
the Schottky barriers are so short that a flat band condition can
be assumed [24–26].TiO
2
material at 550
◦
C, presents a mixed
conduction mechanism, mainly based on electronic conduction
and structure defects-dominated conduction(oxygen deficiency)
mainly related to oxygen vacancies and Titanium interstitials
[27].
Preliminary gas sensing test were carried out to verify use-
fulness of this patterning process to enhance the performance of
a solid thin film, making account of gas-interaction-depleted
region influence of sensitive film; Fig. 5 shows dynamic
responses of solid thin film devices in comparison with
nanowires array prototype to EtOH vapours in dry air carrier,
with a total flow of 100 sccm and 5 min exposure pulses to
6% EtOH. The concentration of test gas is still to high, but
these results were collected as preliminary investigation about
usefulness of this approach. Nevertheless, the performance of
solid thin film devices based on pure polycrystalline TiO
2
,
50 nm thick, onto a standard 2 mm × 2 mm silicon substrate pro-
vided by platinum heater, was compared with micromachined
Fig. 5. Dynamic responses comparison between solid thin film device and
nanowires array prototype towards EtOH pulses at 500
◦
C.
Fig. 6. Dynamic responses comparison between enhanced layout solid thin film
device and nanowires-based towards 3 and 2% EtOH pulses at 550
◦
C.
sensors based on titania nanowires. An increment of about three-
order of magnitude by nanopatterned device towards identical
gas concentrations and operative parameters was registered for
nanopatterned device; also response time is faster compared
with traditional thin film device of pure TiO
2
. Experimental
results gained with the enhanced sensor layout are reported from
Figs. 6–11; all graphs report a comparison in terms of dynamic
response and response calculated as saturated current ratio
measured during EtOH injections and dry air (S = R
EtOH
/R
air
).
Layout of investigated devices is reported in Fig. 5 and each
graph reports experimental data from a sensor with solid TiO
2
thin film and a nanowires (NW) patterned one.
Fig. 6 shows the dynamic behaviour comparison of both
devices exposed to 2 and 3% EtOH injections in dry air carrier;
operative sensors temperature was 550
◦
C; rise times for both
devices are comparable but NW-based device shows a longer
recovery time. About the response, as reported in Fig. 7,NW-
based device performs better performance with a response equal
to about 50. The dynamic signal recorded with 3% EtOH injec-
tion suffers of a slower and irregular saturation signal, probably
Fig. 7. Response analysis of enhanced layout solid thin film device and
nanowires-based towards 3 and 2% EtOH pulses at 550
◦
C.
74 L. Francioso et al. / Sensors and Actuators B 130 (2008) 70–76
Fig. 8. Dynamic responses comparison between enhanced layout solid thin film
device and nanowires-based towards 0.3 and 0.6% EtOH pulses at 550
◦
C.
Fig. 9. Response analysis of enhanced layout solid thin film device and
nanowires-based towards 0.3 and 0.6% EtOH pulses at 550
◦
C.
Fig. 10. Dynamic responses comparison between enhanced layout solid thin
film device and nanowires-based towards 1200 and 1800 ppm EtOH pulses at
600
◦
C.
Fig. 11. Response analysis of enhanced layout solid thin film device and
nanowires-based towards 1200 and 1800 ppm EtOH pulses at 600
◦
C.
related to a poor filling and/or mixing of carrier stream before
cell injection; also the response chart shows a smallest response
for higher concentrations that may be easily explained. Fig. 8
reports tests with lowest gas target concentrations; experimental
conditions are unchanged, with 10.0 V applied to interdigitated
contacts, 550
◦
C operative temperature and 0.3 and 0.6% of
injected EtOH in dry air carrier. The NW-patterned sensors
exhibit a higher response also in this case, but recovery time
is longer than solid sensitive film devices. Considering lowest
gas concentrations, expected responses are smallest and reported
in Fig. 9; brighter columns represent the nanowires sensor and
lowest ones the gas response of standard solid film device. Prop-
erties of devices at higher sensitive film temperature (600
◦
C)
are reported in Fig. 10, with 1200 and 1800 ppm EtOH injec-
tions; the enhanced response of nanowires sensor is confirmed
also at higher temperatures, and in this case the recovery times
become shorter in comparison with solid film devices, reported
as dark plot; the current level of nanopatterned sensor is about
three orders of magnitude smallest than solid thin film sensor
(10
−10
A versus about 10
−7
A of baseline current). The response
at 1200 ppm of EtOH exposure is higher than one order of mag-
nitude versus the smaller response of solid thin film (about 2.5)
as reported in Fig. 11. It is noticeable that compared sensors
for all graphs described above have been fabricated from iden-
tical sol–gel titania film synthesis and manufactured on same
silicon wafer; the sensitive film patterning step for nanowires
fabrication and small 440 m × 440 m active area definition
for solid film-based devices has been performed with identi-
cal dry etching process; also the platinum layers deposition in
UHV sputtering system has been performed at the same time
for both kind of sensors. These fabrication details contribute to
a rigorous experimental validation of devices properties. The
effect of nanowires dimensions on response of this kind of sen-
sors to a fixed concentration of EtOH has been investigated
keeping the enhanced layout of gas sensor described above
and testing nanowires properties with different lateral dimen-
sions. Results gained with 3500 ppm of EtOH in a 200 sccm
L. Francioso et al. / Sensors and Actuators B 130 (2008) 70–76 75
Fig. 12. Nanowires size response effects of enhanced layout sensor devices,
towards 3500 ppm EtOH pulses at 500
◦
C.
dry air carrier are reported in Fig. 12; sensor operative tem-
perature was set to 500
◦
C and contact bias to 3.0 V. Identical
gas injections have been performed for a solid thin film devices
and a nanowires-based device with typical nanowires size of
about 100 and 200 nm, respectively. The response enhancement
within solid and 200 nm NW devices is not so evident (left and
center column), while a good response increment was recorder
for 100 nm NW-based device. It is clear that between solid and
100 nm nanowires sensor, about 100% response enhancement
may be highlighted keeping fixed other experimental param-
eters like gas concentration, temperature, electrodes bias and
device’s layout.
4. Conclusions
Present work focused on application of a standard 365 nm
UV lithography for fabrication of a nanowires-patterned fully
integrated gas sensor device based on TiO
2
metal oxide thin
film. Main aim of the activity was the experimental valida-
tion of metal oxide sensors performance enhancement together
with the demonstrated integration capability of a nanowires
titania array into a single-side silicon substrate as working
gas sensor. Investigated devices presented low power con-
sumption and integrated platinum heater and thermometer.
Experimental gas sensing tests in a controlled environment ver-
ified that devices characterized by a nanopatterned sensitive
area exhibit higher gas response and a recovery time typically
longer at 550
◦
C. Preliminary investigations at higher temper-
atures show a reduced recovery time, keeping the amplified
responses.
Observed behaviour was confirmed by a preliminary pro-
totype sensor without integrated heater and also by enhanced
silicon miniaturized devices, characterized in the second sec-
tion of the paper. In conclusion, a simple nanomachining of a
metal oxide film results in an enhanced performance in terms
of responses considering that this patterning process exposes a
wider area of single wires structure to gaseous environment, con-
tributing to deeper carriers depletion after exposure to oxidizing
gases.
Further investigation by I–V plots and gas-sensing tests with
thinner nanowires array are ongoing, while the application of
this patterning procedure to different metal oxide materials is
actually under investigation.
Acknowledgments
Authors kindly acknowledge Mr. Flavio Casino for tech-
nical support during gas sensing tests. This work has been
partially funded by the European project NANOS4 and by Ital-
ian National MIUR Project No. 156 “Sviluppo di tecnologie
innovative per la societa’ dell’informazione: Optoelettronica,
Nanoelettronica e Sensoristica”.
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Biographies
Luca Francioso received the degree in physics in April 2001 at the Univer-
sity of Lecce. Since 2001, he works in the Institute for Microelectronic and
Microsystems of the Italian National of Research Council (C.N.R I.M.M.) in
Lecce (Italy) in the field of silicon micromachined systems and thin film gas sen-
sor, in charge to develop fabrication processes and new sensors designs. Since
February 2002, he is in the position of researcher working on within silicon
technology and integration of sol–gel process into silicon devices. At present
he works in the field of combustion control sensors with implementation of thin
film based gas sensors and development of micromachining process of metal
oxide layers.
Antonella M. Taurino received her degree in physics from the University of
Lecce in April 2000, with a thesis on electronic nose. In 2001, she took an
advanced post degree specialization course in electron microscopy. In 2004,
she got her PhD in materials engineering with a thesis on nanostructured based
gas sensors devices. At present, she works in the field of structural and elec-
trical characterization of innovative nanostructured materials for gas sensors
application.
Angiola Forleo received the degree in physics from the University of Lecce
in April 2000 with a thesis on semiconductor gas sensors. In 2000, she was
with the Department of Physics, University of Lecce, where she was involved
in deposition of thin films making use of the pulsed laser deposition technique.
Since 2001, she is working at the IMM-CNR Institute of Lecce. She researches
the interactions between gases and mixed oxides and the electrical and optical
characterization of thin films for organic and inorganic gas sensors.
Dr. Pietro Siciliano, physicist, senior researcher, received his degree in physics
in 1985 from the University of Lecce. He took his PhD in physics in 1989 at
the University of Bari. During the first years of activities he was involved in
research in the field of electrical characterisation of semiconductors devices.
He is currently a senior member of the National Council of Research in Lecce,
where he has been working from many years in the field of preparation and char-
acterisation of thin film for gas sensor and multisensing systems, being in charge
of the Sensors and Microsystems Group. He is responsible for several national
and international projects at IMM-CNR in field of Sensors and Microsystems,
mainly for environmental, automotive and agro-food applications. He has been
organiser and Chairman of International Conferences and Director of Interna-
tional Schools on Sensors and Microsystems. He is member of the Steering
Committee of AISEM, the Italian Association on Sensors and Microsystems.
At the moment he is Director of IMM-CNR in the Department of Lecce.
. online at www.sciencedirect.com
Sensors and Actuators B 130 (2008) 70–76
TiO
2
nanowires array fabrication and gas sensing properties
L. Francioso
∗
, A.M. Taurino,. (TiO
2
) polycrystalline nanowire array for gas sensing applications with lateral size ranging from 90
to 180 nm, and gas sensing characterizations are presented.
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