Chemical vapor deposition

Tài liệu Metal Organic Chemical Vapor Deposition: Technology and Equipment docx

Tài liệu Metal Organic Chemical Vapor Deposition: Technology and Equipment docx
... MOCVD Technology and Equipment 201 24 CVD Metalorganics for Vapor Phase Epitaxy Product Guide and Literature Review, Rohm and Haas, 60 Willow Street, North Andover, MA 01845 25 Haigh, J., and O’Brien, ... organometallic chemical vapor deposition (OMCVD), metal- organic vapor phase epitaxy (MOVPE—the name used by one of the most important conferences), organometallic pyrolysis, or metal- alkyl vapor ... (From Killeen and Breiland.)[72] Chapter 4: MOCVD Technology and Equipment 6.3 199 New Materials Although MOCVD has been used to deposit a large number of III-V and II-VI materials and structures,...
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Enhancement-Mode Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors on Glass Substrates Using N2O Plasma Treatment docx

Enhancement-Mode Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors on Glass Substrates Using N2O Plasma Treatment docx
... reduction of electron concentration in the N2 Otreated films Conclusions The postfabrication N2 O plasma treatment on the asfabricated MOCVD ZnO TFTs changed their device operation from depletion-mode ... number of ionized oxygen vacancies in the ZnO film.57–59,61–63) In general, an ionized oxygen vacancy in a ZnO film donates two electrons to the conduction band, which is mainly responsible for ... as-fabricated and N2 O -plasma- treated ZnO TFTs As-fabricated Device operation Depletion-mode Drain current at zero VGS 3.3 Characteristics of N2 O -plasma- treated ZnO TFTs 3.3.1 N2 O plasma treatment for...
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Nitrogen doped ZnOfilm grown by the plasma-assisted metal-organic chemical vapor deposition pot

Nitrogen doped ZnOfilm grown by the plasma-assisted metal-organic chemical vapor deposition pot
... ZnO film In this paper, a nondoped ZnO film and a nitrogen doped one are deposited by plasma-assisted metal-organic chemical vapor deposition (MOCVD) We have investigated their structural and optical ... of group theory imply the better crystal quality of nitrogen doped ZnO film In the Raman spectrum of nitrogen doped ZnO film, other peaks at 274, 508, 641.9, and 857 cmÀ1 can be found The possible ... 1608C followed by deionized water rinse The reaction temperature was 6008C and the power of the plasma source was 900 W The growth rate was mm/h The non -doped sample (sample A) was grown with O2...
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Deposition of carbon nanotubes on si nanowires by chemical vapor deposition

Deposition of carbon nanotubes on si nanowires by chemical vapor deposition
... a mixture of graphitic carbon and SiC nanowires was formed because of both the carbonization of the nanowires and the fast carbon deposition to form the carbon- like structure Conclusions In summary, ... tube-like carbon shell structure and a carbonization e€ect for the transformation of Si NWs to SiC nanowires At a relatively low substrate temperature ($900°C), the deposition rate of carbon on the ... di€raction rings of crystalline cubic Si and b-SiC could be identi®ed High resolution TEM images revealed that Si NW with carbon coating consisted of a single crystalline Si core and a sheath of carbon...
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Iron catalytic growth of prism shaped single crystal silicon nanowires by chemical vapor deposition of silane

Iron catalytic growth of prism shaped single crystal silicon nanowires by chemical vapor deposition of silane
... al / Chemical Physics Letters 411 (2005) 198–202 201 Fig TEM images of silicon nanostructures growth by different pyrolysis time of silane (a) a triangle -shaped silicon tip grown on a CNT by 30-min ... conclusion, by chemical vapor deposition of silane, the large-scale SiNWs were grown under the catalysis of Fe particles at the lower temperature – 450 °C These nanowires have a diameter of 50–70 ... al / Chemical Physics Letters 411 (2005) 198–202 not only have a size-confined effect on the growth of SiNWs, but also facilitate the pyrolysis and deposition of silane on iron and growth of the...
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Silicon quantum wires arrays synthesized by chemical vapor deposition and its micro structural properties

Silicon quantum wires arrays synthesized by chemical vapor deposition and its micro structural properties
... Conclusion In conclusion, the morphologies and microstructures of well-aligned SiNWs arrays synthesized by CVD template method were investigated by electron microscopy It is found from the results ... collected from the middle part of the SiNWs arrays (Fig 1c) show the presence of silicon in addition to Al and O C and Cu are attributed to the copper micro- grid with carbon film used to support ... X-ray diffraction (XRD) study, the silicon films on both surfaces of the alumina membrane were removed The sample was transferred on to the standard silicon supporter and the spectrum was obtained...
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Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition

Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition
... orientation of the evolving Si-NWs In this study, we investigate the morphological evolution of Si-NWs on Si substrates grown by nanoscale Au–Si island- catalyzed rapid thermal chemical vapor deposition ... morphological and dimensional evolution of the Si-NWs on Si (0 1) and (1 1) surfaces grown 157 by using Au–Si nanoisland -catalyzed RTCVD For a given growth condition, a critical thickness of the Au film ... bright tips of the NWs seem to be Au–Si droplets in Fig 1(d) The diameters of the NWs are similar to those of the Au–Si droplets The existence of a critical Au film thickness for initiation of NW nucleation...
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Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition

Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition
... in 200-nm-thick silicon on insulator thin films [8–10] Simulation of the emission spectrum of an ehp by a convolution product of the density of states of the carriers affected by the Fermi–Dirac ... MEB images of the nanowires obtained by a CVD method The nanowires are copper catalyzed (a) As-grown nanowire with its catalyst droplet Its diameter is 120 nm (b) Image of a SiNW obtained after ... in the SiNWs obtained by a CVD method The passivation of the SiNW surfaces is essential to reduce the deep trap density and allow the observation of the radiative recombination of a free electron–hole...
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plasma - enhanced chemical vapor deposition carbon nanotubes for ethanol gas sensors

plasma - enhanced chemical vapor deposition carbon nanotubes for ethanol gas sensors
... and (f) 90 s ethanol molecules The conductance of the sensors adjusts itself when they are exposed to ethanol gas Experimental In this work, microwave plasma enhanced chemical vapor deposition ... Conclusions The MWCNT-based gas sensors made by MPECVD for detecting ethanol molecules have been studied at a ppm-level at room temperature The conductance of the sensors decreases when the sensors are ... grown carbon nanotubes for TEM analysis were separated from the substrate and then ultrasonicated in ethanol After ultrasonic treatment, a drop of liquid was then sprayed onto a carbon- coated...
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Báo cáo hóa học: "Preparation of Aligned Ultra-long and Diameter-controlled Silicon Oxide Nanotubes by Plasma Enhanced Chemical Vapor Deposition Using Electrospun PVP Nanofiber Template" potx

Báo cáo hóa học:
... preparation of aligned ultra-long and the synthesis of diameter-controlled SiOx nanotubes array by plasmaenhanced chemical vapor deposition (PECVD) process using electrospun- suspended polymer fiber ... Figs and 2, it was clearly that well -aligned and ultra-long PVP nanofibers were obtained by electrospinning over large areas There are two basic requirements Fig SEM image of aligned PVP nanofibers ... high-magnification SEM images of aligned SiOx nanotubes c SEM image of a cross-section of SiOx nanotubes structure Figure 4a and b show, respectively, the TEM images of aligned nanotubes and an individual...
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Báo cáo hóa học: " A Temperature Window for the Synthesis of Single-Walled Carbon Nanotubes by Catalytic Chemical Vapor Deposition of CH4 over Mo2-Fe10/MgO Catalyst" pptx

Báo cáo hóa học:
... Conclusions A temperature window of SWCNTs growth by catalytic chemical vapor deposition of CH4 over Mo-Fe/MgO catalyst has been studied The results suggest that when the temperature is lower than 750 ... mg catalyst was put into the quartz tube The temperature was raised to the setting value in Ar atmosphere at a flow rate of 200 mL/min before CH4 was introduced into the reactor at 60 mL/min for ... min, then CH4 was turned off and the furnace was cooled to room temperature in an Ar flow The impurities were removed by concentrate HCI The Raman spectra were recorded by a Renishaw inVia spectrophotometer...
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Báo cáo hóa học: "The Influences of H2 Plasma Pretreatment on the Growth of Vertically Aligned Carbon Nanotubes by Microwave Plasma Chemical Vapor Deposition" pptx

Báo cáo hóa học:
... in the annealing process [17] In this study, the effects of H2 flow rate during plasma pretreatment on the synthesis of MWCNTs on a Ni/TaN/Si substrate by using a microwave plasma chemical vapor ... vibrations of carbon atoms with dangling bonds in plane terminations of ‘‘disordered graphite’’ or glassy carbons The G-band corresponds to the E2g mode of graphite and is related to the vibration of ... deactivation [24] The size and distribution of these nanoparticles are dependent on the flow rate of H2 during plasma pretreatment This leads Ni particles to become smaller at the support of H2 from the...
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Báo cáo hóa học: " Tungsten Oxide Nanorods Array and Nanobundle Prepared by Using Chemical Vapor Deposition Technique" potx

Báo cáo hóa học:
... gases during deposition Following an increase of OGC, the sub-stoichiometry tungsten oxide- WO2 and WOx-would become stoichiometry tungsten oxide It was also found that atomic tungsten and carbon ... two possible chemical states might coexist inside the sample One was tungsten oxide together with tungsten carbide Due to lack of oxide component, the stoichiometry phase of tungsten oxide should ... concluded that atomic carbon, atomic tungsten and sub-stoichiometry tungsten oxide existed in this tungsten oxide particle-based thin film The XPS profile of sample (b) prepared under high OGC was shown...
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Báo cáo hóa học: "Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition" docx

Báo cáo hóa học:
... 154 in QC emitters, could be obtained in these samples This will be verified in the future experiments Conclusions In summary, the interwell coupling effect in Si/ Si0.66Ge0.34 CQWs structures grown ... by UHV-CVD was investigated using low temperature PL measurements Red shift of PL peak energy caused by interwell coupling was observed following a reduction in barrier thickness Variations in ... in the QC structures, because the resulting valence band offset is only about 0.1 eV In this paper, we present a photoluminescence (PL) study on strained Si/Si0.66Ge0.34 CQWs grown by ultra high...
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Báo cáo " Growth of CdS thin films by chemical bath deposition technique " pptx

Báo cáo
... (311) planes of cubic CdS [10] Fig Typical X-ray diffractogram of CdS thin films as grown Inset shows XRD pattern of the CdS thin films reported in [9] Table Standard ASTM card for CdS [10] 2θ ... spectra of thin films growth by the spray pyrolysis technique consist of a characteristic red band centered at about 698 nm The apparition of this red band may be assigned to the excess of Cd2+ ... photoluminescence spectrum of the as-prepared CdS thin films Conclusions In this work, we show a route to the deposition of CdS thin film on glass substrates using CBD technique from heated solutions...
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