multiplication 0403 si 001

Báo cáo hóa học: " Ordered GeSi nanorings grown on patterned Si (001) substrates" doc

Báo cáo hóa học:
... highly ordered nanorings with controllable period by NSL and RIE technology Ordered 430 nm period GeSi nanorings were successfully fabricated on the ordered pit -patterned Si (001) substrates The size ... Crystalline Silicon in Alkaline Solutions J Electrochem Soc 1990, 137:3612 Zhong Z, Chen PX, Jiang ZM, Bauer G: Temperature dependence of ordered GeSi island growth on patterned Si (001) substrates ... the size of capped GeSi QDs and the Si capping process Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the nanorings...
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Báo cáo hóa học: " Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands" pdf

Báo cáo hóa học:
... These are obtained by calculating for each image point the surface normal vector [hkl] using the nearest-neighboring image points to define the local surface plane The intersection points of the ... facets in the order of increasing inclination angle, where the {12 5} facets represent those with the steepest inclination angle of 68° As proved in Table 1, for these facets, the theoretical ... grown by liquid phase epitaxy [18] In addition, the number of side facets and their maximum inclination angles also increases with increasing aspect ratio Concerning the whole group of SiGe islands,...
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Báo cáo hóa học: " Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)" ppt

Báo cáo hóa học:
... stages of growth, so that a direct comparison with experiments under realistic conditions was not attempted Nevertheless, these simulations nicely demonstrated the existence of optimal ranges ... control is poor Consequently, the optimal regime for growth can be identified at intermediate temperature and deposition flux where it is possible to achieve good control both on island positioning ... Fig Snapshots for the simulation after deposition of ML of Ge on a pit-patterned substrate Red circles represents 2D islands and blue ones are for pyramids The surface shown corresponds to 480...
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Báo cáo hóa học: " Morphology Analysis of Si Island Arrays on Si(001)" doc

Báo cáo hóa học:
... the stronger the intensity at the corresponding position in the Nu(m) distribution The polar plots confirm that most of the island sidewall facets in the arrays lie along the x and y axes of the ... that play a key role on the formation of these Si island arrays, we have carried out a detailed study of their morphology features, in particular island size and facet distribution Taking into account ... {113} facets) on one side and 35° (i.e., {112} facets) on the other side There is an asymmetry then between opposite sides of the islands as well (along the y axis), being more pronounced for...
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Báo cáo hóa học: "Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography" doc

Báo cáo hóa học:
... determining strain relaxation and therefore in defining the compositional profiles of the islands Experimental Procedure The sample considered here consists of 8.5 monolayer of Ge deposited by molecular ... concentration increases monotonically for islands forming randomly on a flat surface, while it tends to a constant xGe = 0.4 for islands on the patterned substrate This result provides an independent confirmation ... datasets is obtained, as shown in Fig 1d, choosing d * 0.87 It can be therefore concluded that the strain in site-controlled islands is reduced by about 10% with respect to islands grown on the planar...
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