High k dielectric MIM capacitors for silicon RF and analog applications

... Yoshitomi, Y Ebuchi, H Kimijama, T Ohguro, E Morifuji, H S Momose, K Kasai, K Ishimaru, F Matsuoka, Y Katsumata, M Kinugawa, and H Iwai, High performance MIM capacitor for RF BiCMOS LSIs,” in Proc ... method, and a high capacitance density of 17 fF/µm2 has been achieved for AlTaOx MIM capacitor [41] In particular, the RF performance of high- κ MIM capacitors have been studied for Al2O3 based dielectrics ... investigation of high- κ materials for gate oxides applications The reliability assessments for high- κ MIM capacitors could be found for HfO2 based high- κ dielectrics in [46, 47] and for Ta2O5 in...

High k dielectrics in metal insulator metal (MIM) capacitors for RF applications

... MIM capacitors This section briefly reviews some of the dominant works on the high- k dielectrics in the MIM capacitors for RF applications The insulators used in these works can be classified into ... loss Metal Metal -Insulator -Metal capacitor Fig 1-2: Development of capacitors for silicon integrated circuit from poly-insulatorsilicon structure [4] to poly -insulator- poly [6] and metal- insulator -metal ... Aiguo, "High density metal insulator metal capacitors using PECVD nitride for mixed signal and RF circuits," in IEEE International Interconnect Technology Conference, 1999, p 245 [14] K Stein, J Kocis,...

High k metal insulator metal (MIM) capacitors for RF mixed signal IC applications

... Fo und e d High- κ Metal- Insulator -Metal (MIM) Capacitors for RF/ Mixed- Signal IC Applications KIM SUN JUNG M Eng A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY ... 27.1 nm thick HfO2 MIM capacitors, which are low enough for most RF and analog applications The requirements for specific applications are indicated with dashed lines 34 Fig 3.4 Performance comparison ... Fig 3.3 Leakage currents for 16.4 nm and 27.1 nm thick HfO2 MIM capacitors, which are low enough for most RF and analog applications The requirements for specific applications are indicated with...

Fabrication and characteristics of high k MIM capacitors for high precision applications

... EOT = ε SiO T ε high − k high − k , phy (2-3) where EOT is the Equivalent Oxide Thickness of high- k dielectric, εSiO2 and high- k are the permittivity of SiO2 (3.9) and the high- k dielectrics, ... and Thigh -k, phy is the physical thickness of the high- k film In searching suitable high- κ dielectric materials for MIM capacitors, a simple criterion is high dielectric permittivity (κ) and high ... reported high- κ dielectric stacks for MIM capacitors are summarized in Table 2.4 Table 2.4 List of electrical characteristics of stacked high- κ MIM capacitors reported High- κ dielectric Leakage (A/cm2)...

Study on application of high k dielectric materials for discrete charge storage memory

... investigation Another exploration of high- k dielectrics for SONOS type memory is to use highk dielectrics as charge storage layer instead of nitride The potential advantages of high- k charge storage ... the formation of NCs, device integration, and the memory performance The implementation of high- k dielectric instead of SiO2 brings additional advantage to NC memory in that the use of high- k dielectric ... STUDY ON APPLICATION OF HIGH- K DIELECTRIC MATERIALS FOR DISCRETE CHARGE STORAGE MEMORY WANG YING QIAN (M Eng., Tsinghua University, China) A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY...

Novel III v mosfet integrated with high k dielectric and metal gate for future CMOS technology

... NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE CMOS TECHNOLOGY Jianqiang Lin 2009 NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE ... 2006 [1.38] I Ok, H Kim, M Zhang, T Lee, F Zhu, L Yu, S Koveshnikov, W Tsai1 ,V Tokranov, M Yakimov, S Oktyabrsky, and J.C Lee “Self-Aligned n- and pchannel GaAs MOSFETs on Undoped and P-type Substrates ... Jr., and S .K Banerjee, “Unpinned metal gate /high- k GaAs capacitors: Fabrication and characterization,” Appl Phys Lett., vol 89, pp 043501, 2006 [1.37] S Koveshnikov, W Tsai, I Ok, J.C Lee, V Torkanov,...

Application of high k dielectric to non volatile memory devices

... Flash Memory Devices 1.2 Flash Memory Devices Among various non- volatile memory devices, floating gate (FG) type flash memory devices are the core of every modern non- volatile semiconductor memory ... newer applications Thanks to the characteristics of non- volatile memory, it offers a wide range of applications from industrial computers to consumer handheld devices Chapter Introduction to Floating ... Flash Memory Devices Table 1.1 Volatile and non- volatile memory types and their main features Memory Type Features Volatile Memory Dynamic Random Access Memory (DRAM) High density, low cost, high- speed,...

Study on advanced gate stack using high k dielectric and metal electrode

... mask effect on gate stacks of metal electrode / high- K dielectric should be investigated and understood for successful implementation of hard mask in the gate stack 1.3.4 Challenges of Metal Electrode ... replace current SiO2 dielectric and poly-Si electrode for continuous success of CMOS technology The study on the formation of advanced gate stacks using high- K dielectric and metal electrode is included ... materials such as high- K dielectric and metal electrode in the gate stacks have been done intensively, the study of both plasma etching and wet etching for formation of advanced gate stack, so far,...

Hafnium oxide based high k dielectric gate stack

... thicker layer of oxides of higher dielectric constant (k) Intensive research is underway to develop oxides into new high quality electronic materials 1.4 Alternative high- k gate dielectrics candidates ... process from gate dielectric to Si channel While SiO2 provides us with the remarkable properties as the gate dielectric, the gate leakage current increases exponentially as the oxide thickness scaled ... on most high- k dielectric materials, the use of stable metallic gate electrodes is required to solve the integration problems when the gate dielectric material is replaced by high- k dielectric...

Development and characterization of high k dielectric germanium gate stack

... the high- k material in consideration EOT is given by tox  thigh  k  kSiO2 / khigh  k , where thigh  k and khigh  k are the physical thickness and relative dielectric constant of high- k dielectric, ... density Jg Gate leakage current density k Dielectric constant (relative permittivity) kGe Dielectric constant of Ge (relative permittivity) khigh -k Dielectric constant of high permittivity dielectric ... passivation measured at 1MHz, 800kHz, 500kHz, 300kHz, 200kHz, 100kHz, 80kHz, 50kHz, 30kHz, 20kHz and 10kHz Fig 3.7 Gate leakage current densiy for samples with Si passivation and SN 55 passivation Smaller...

Metal gate with high k dielectric in si CMOS processing

... etching process can be used for metal gate integration using the AlN layer Although a wider range of work function was obtained using FUSI HfSi gate on SiO2, more study HfSi gate on high- K dielectric ... several gate dielectrics has been explained using experimental data in conjunction with interface dipole theory [1.52] The work function of polysilicon gates on high- K, especially Hf-based high- K dielectrics ... HfAlON dielectric Benchmarked data are also compared The SA gate on high- K shows slightly lower leakage current than n+ polysilicon gate on high- K and comparable to FUSI NiSi gate on high- K The...

Báo cáo sinh học: " Research Article A New-Fangled FES-k -Means Clustering Algorithm for Disease Discovery and Visual Analytics" pdf

... of human subjects Acknowledgments Dharani Babu Shanmugam and Haricharan Padmanabana Computer Programmers assisted with program and code implementation Kara Scott for her help with the evaluation ... evaluation of the algorithm, compilation, and ﬁeldwork Jameson Lwebuga-Mukasa for asthma datasets and Anne Evens and Patrick MacRoy for BLL dataset Special thanks to anonymous reviewers for oﬀering ... compact scattered data Unfortunately, not all data are compact and scattered; hence, an improved algorithm is required to evaluate very large data sets This declaration comes 30 years after that...

Advanced contact engineering for silicon, germanium and germanium tin devices

... ADVANCED CONTACT ENGINEERING FOR SILICON, GERMANIUM, GERMANIUM- TIN DEVICES TONG YI (M Eng.), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ELECTRICAL AND COMPUTER ... on contact engineering for Si, Ge, and GeSn devices Low contact resistance is needed for advanced Si based devices and also new generation of Ge or GeSn based devices Contact resistivity at the ... nm and nm for Al/n-Si and Al/n-Ge contacts, respectively 14 Fig 1.10 Benchmarking of the specific contact resistivity of (a) n-type Si and Ge contacts and (b) p-type Si and Ge contacts...

Escrow techniques for mobile sales and inventory applications doc

... design and analysis of algorithms, architectures and protocols for mobile computing and communications, including techniques for locating mobile users, mobile database access, and mobile sales applications ... site-transaction escrow method, that is suitable for sales and inventory applications supporting both stationary and mobile users We provided a formal model for reasoning about site-transaction escrow, and ... Krishnakumar, R Jain / Escrow techniques for mobile applications that the site-transaction escrow technique is more suitable than traditional database locking schemes for the mobile sales and inventory application...

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