...
direction).
the GB than there is into the matrix of the grains. The ratio of these two fluxes
can be estimated through the use of Eqs. 8- 2 and 8- 3 for FCC metals; i.e.,
nb
6Db
3
x
8. 1
TM
- ... consumes the
Q
phase at one interface and the
@
phase at the other interface.
It
is instructive to begin with the simplified analysis of the kinetics of...
...
in
the
presence
of
an
applied field.
logarithm of the rate is plotted on the ordinate and the reciprocal of the
absolute temperature is plotted along the abscissa. The slope of the resulting ... continuous
state of random motion, which is intimately dependent on the temperature
of
the gas. During their motion the gas particles collide with each other a...
... functional within bulk
matter. Therefore, the interaction energy typically follows the behavior de-
picted in Fig. l-8b as a function of separation distance regardless of the type of
materials ... by the
rupture of the ultrathin tunnel barrier due to the mismatch in thermal expansion
between Pb alloys and the Si substrate on which the device is built. During
tem...
...
Fig. 1-8b. The generalized behavior shown is common for all classes of solid
materials, regardless
of
the type of bonding or crystal structure. Although the
mathematical forms of the attractive ... discipline of materials science and engineer-
ing. A dramatic increase in our understanding of the fundamental nature of
materials throughout much of the twent...
... view
of
the
MOS
field effect transistor structure
in
Fig.
4-1
indicates the extent to which the technology is employed. Above the plane of
the base P-Si wafer, all
of
the films with the ...
(4-34b)
Note the use of the perfect gas law and the neglect of the temperature
dependence
of
D.
Maintenance of stoichiometry requires that
JCd
=
JTez
9...
...
estimated
in
the capillarity theory. The uncertainties are now in
i*
and
E;,.
One of the important applications
of
this theory has been to the subject
of
epitaxy, where the crystallographic ... transport, the two most likely ones involve self-diffusion
through the bulk or via the surface of the islands. In the case of sintering or
coalescence of two e...
... series of post-specimen lenses. The objective lens produces the first
image of the object and is, therefore, required to be the most perfect
of
the
lenses. Depending on how the beams reaching the ... Growth of Thin Films,
2.*
R. W. Vook,
Int. Metals Rev.
27,
209 (1 982 ).
3.*
C. A. Neugebauer, in
Handbook of Thin- Film Technology,
eds.
L.
I.
4.*
K....
... Again on the basis of
384
interdiffusion and Reactions in Thin Films
considering the second term on the right-hand side of
Eq.
8- 26.
For the
polarity shown, all terms in parentheses are ... no surprise that the varied mechanical properties of thin films
386
Interdiffusion and Reactions in
Thin Films
N
-
Si
P-Si
Figure
8- 1
8.
Schematic dia...
... parallel, to the
plane of incidence. Through the use of the Maxwell equations with appropriate
interfacial boundary conditions, the amplitudes of the components of the
transmitted
(&,l,
8, ") ... on whether
the
1.
spin polarization of electrons,
2.
net magnetic moment of the sample, or
3.
internal magnetic (hyperfine) field
480
Electrical and...
...
substrates. The value
of
K,
depends
on
a number of factors. Most
important is the nature of the materials in contact, but the extent and type
of
lubrication, surface temperature, and nature of the ... consisting
of
20
interfaces, each with R
=
0.05,
the value
of
T
=
(0.95)20
=
0.3 58.
If,
how-
ever, R is reduced to
0.01
by means
of
AR
coati...