... channel of next-generation high-performance CMOS devices, while rare earth oxidesbelonging to another class of materials offer good passi-vation of germanium to reduce the density of interfacestates, ... L693GJ, UK.3Department of Engineering, Materials Science and Engineering,University of Liverpool, Liverpool, L69 3GH, UK.4Department of Chemistry,University of Liverpool, Liverpool, L69 ... Relaxation of La-DopedZirconia Caused by Annealing Ambien t. Nanoscale Res Lett 2011 6:48.Zhao et al. Nanoscale Res Lett 2011, 6:48http://www.nanoscalereslett.com/content/6/1/48Page 6 of 6effect of...