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Nanoscale Res Lett (2007) 2:149–154 151
123
NANO EXPRESS
Interwell coupling effect in Si/SiGe quantum wells grown by ultra
high vacuum ... in the future experiments.
Conclusions
In summary, the interwell coupling effect in Si/
Si
0.66
Ge
0.34
CQWs structures...
... in an AB interfe-
rometer in which the RSOI is considered by introducing
a spin-dependent phase factor in the linewidth matrix
elements. Due to the interplay between the quantum
destructive interferenc ... asymme-
trical couplings between the QDs and metallic
electrodes induce the enhancement of s pin-dependent
Seebeck effects in the vicinity of the corresponding
spin-dependent as...
... could result in varying
amounts of photobleaching leading to reduced produc-
tion of ROS at high concentrations.
4.3 Cellular responses to PDT induced damage
It is intriguing that the effects of ... to
microtubular (MT) network since it has been shown that
MT disruption is involved in apoptosis [50,51]. Depo-
lymerization of tubulin may be caused by an increase in
PDT induced intrac...
... detected in 55% of
Rubinstein–Taybi syndrome patients, leaving the diagnosis in 45% of patients
to rest on clinical features only. Interestingly, this microdeletion of 16p13.3
was found in a young ... abnormality in the cyclic adenosine
monophosphate-response element-binding protein has previously been
determined as a cause of Rubinstein–Taybi syndrome. However,
microdeletion of...
... within every bin. Since
the operations in one embedding unit are independent from
those in the other units, we only discuss the operations in an
arbitrary unit. In the normal LSB hiding, a string ... when the bin size is tiny because there are
few coordinates in the same bin. When there is no coordinate
in one bin, no data can be embedded despite how many
coordinates in the othe...
... digital cinema required
the replacement of the analog processing stages in the
imaging chain by digital processing modules, opening the
way for the introduction to the imaging pipeline of the
speed ... from demosaicking as well as zippers and
rings arising from zooming. Likewise, Chung and Chan
proposed in [20] a joint demosaicking-zoomingalgorithm
based on the interpolation of edge inf...
... InCl and InCl
2
while the amount of InCl increases with increasing tem-
perature [33]. Thus, during growth for T [ 400 °C InCl
3
decomposes predominantly into InCl according to,
InCl
3
! InCl þ ... of In
2
O
3
NCs by direct
oxidation of In with O
2
and also by the incorporation of
NH
4
Cl in the In under N
2
. The reaction of In and NH
4
Cl
yields InN NCs using NH
3
. The synthe...
... enhanced by increased Ce
3+
ions. These results demonstrate that Ce
doping in ZnO NRs can be an efficient luminescence center in ZnO NRs without post
thermal annealing processes.
Competing interests ... mM of zinc acetate dihydrate
(Zn(CH
3
COO)
2
·2H
2
O) dissolved in ethanol solution, followed by drying at 100°C for 5 min.
The Ce-doped ZnO NRs were grown by placing the...
... a minority belongs to the mixed type. In
Figure 4 inversion domain boundaries appear in both
pictures as straight lines as indicated. These have an
inclination of 60° with respect to the interface, ... stacking faults are found running perpendi-
cular to the [0001] direction as indicated, i.e., they lie in
the C -plane. T he elongated spots in the diffraction pat-
tern inset in Figu...
... freestanding GaN grating by molecular
beam epitaxy
Yongjin Wang
*
, Fangren Hu, Kazuhiro Hane
Abstract
We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by ... patterned
growth of InGaN/GaN quantum wells (QWs) on
freestanding nanoscale GaN gratings by MBE. Various
freestanding GaN gratings are processed on a GaN-on-
silicon substrate by...