... its design and coordination, ISY carried out the AFMmeasurements and participated in its analysis, HC participated in the designof the study and its coordination. All authors read and approved ... Si-cappedGe-Sn nanodots on Si substrates formed using an ultrathin SiO2filmtechnique. J Appl Phys 2009, 106:014309.4. Nakamura Y, Masada A, Cho S-P, Tanaka N, Ichikawa M: Epitaxial growth ofultrahigh ... this article as: Mashanov et al.: Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy. Nanoscale Research Letters2011 6:85.Submit your manuscript to a journal and benefi...