...
Defects XX
h
XX
c1
XX
c2
Ky3(h)
Ky2(c) Ky1(c) PP
g
2. 0 024 2. 0 027 2. 0035 2. 0 025 2. 0 028 2. 0036 2. 0047
g
2. 0045 2. 0043 2. 0040 2. 0045 2. 0043 2. 0045 2. 0 028
E
C
– E
i,
eV 1.84 1.79 ...
(6-6
'
) 13.71 9. 52 X
h
-1: 0.0 62
1 x
29
Si
ID2-1:
1 x
29
Si
E16-1:
1 x
29
Si
(3-3
'
) 1.87 2. 76 X
h
-2: 0.146
3 x
29
Si
ID2 -2...
... 3H
2
(7)
Chlorination of Si
2
H
6
:
Si
2
H
6
+6HCl
2SiHCl
3
+5H
2
(8)
Silicon carbide production:
SiH
3
CH
3
SiC +3H
2
(9)
Fig. 9. Chemical process of silicon carbide ... case of
C-face.
Properties and Applications of Silicon Carbide7 2
Fig. 22 . TEM micrograph of the cross section of the silicon carbide film, shown in F...
... a.u.
Cr 5 -22 2 -19 859
Mn - 82 - 92 316 357
V -23 0 88 0
Fe 107 22 1 -4 12 -854
Table 2. Total energy differences between the ferromagnetic and antiferromagnetic states
AFMFM
E and mean-field ... (20 08)
023 522 .
[22 ] Y. Hijikata, H. Yaguchi, and S. Yoshida: Mater. Sci. Forum 615-617 (20 09) 489.
[23 ] Y. Hijikata, T. Yamamoto, H. Yaguchi, and S. Yoshida: Mater. Sci...
... Dependencies of Cylindrical Dipolar Glass Waveguides
on Temperatures,
Electronics and Electrical Engineering, Vol. 106, No 10, 83-86, ISSN
13 92- 121 5
Properties and Applications of Silicon Carbide1 22
published ... SiC and High Purity Semi-
Insulating 4H SiC through 800 K.
Proceedings of 12
th
GAAS Symposium, pp. 439-4 42,
Amsterdam, the Netherlands, 11-15 Octobe...
... atom)*
SiC -26 .7 4Ta+SiC = Ta
2
C+Ta
2
Si - 4.9
Ta
2
Si -10.1 3Ta+SiC = TaC+Ta
2
Si -4.3
Ta
5
Si3 -9.0 5Ta+2SiC = 2Ta
2
C+TaSi
2
-5 .2
TaSi
2
-8.0 3Ta+2SiC = 2TaC+TaSi
2
-4.4
Ta
2
C -46 11Ta+3SiC ... atom)*
SiC -26 .7 4Ta+SiC = Ta
2
C+Ta
2
Si - 4.9
Ta
2
Si -10.1 3Ta+SiC = TaC+Ta
2
Si -4.3
Ta
5
Si3 -9.0 5Ta+2SiC = 2Ta
2
C+TaSi
2
-5 .2
TaSi
2
-8.0 3Ta...