Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition

... 2008PACS:71.35.Ee78.55.Ae78.67.ÀnKeywords: Nanowires Silicon Photoluminescence ExcitonElectron-hole-plasmaabstractWe have carried out photoluminescence measurements of silicon nanowires (SiNWs) obtained by the chemical vapor deposition ... Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition O. Demichela,Ã, F. Oehlera, V. Calvoa,P.Noe´a, ... 20 0-nm-thick silicon oninsulator thin ﬁlms [8–10].Simulation of the emission spectrum of an ehp by a convolu-tion product of the density of states of the carriers affected by theFermi–Dirac...

Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition

... (2007) 153–157Dimensional evolution of silicon nanowires synthesized by Au–Si island-catalyzed chemical vapor deposition D.W. Kwak, H.Y. Cho, W C. YangÃDepartment of Physics and Quantum-Functional ... evolution of silicon nanowires (Si-NWs) on Si (0 0 1) and (1 1 1) substratessynthesized using nanoscale Au–Si island-catalyzed rapid thermal chemical vapor deposition. The Au–Si islands are formed by ... orientation of the evolving Si-NWs.In this study, we investigate the morphological evolution of Si-NW s on Si substrates grown by nanoscale Au–Siisland-catalyzed rapid thermal chemical vapor deposition (RTCVD)....

Temperature dependence of morphology and diameter of silicon nanowires synthesized by laser ablation

... oxideexceeded the growth rate of crystal silicon, outerlayer of silicon oxide will surround the crystal sil-icon. As a result, the growth of crystal silicon ceased and silicon oxide of outer layer coalescedtogether ... Thepeculiar feature of the branch suggests that theremay exist a competitive growth between crystal silicon core and outer layer of silicon oxide. Whenthe forming rate of outer layer of silicon oxideexceeded ... the kinks of silicon nanoparticle chains resulted from a change of growth direction of the SiNWs. We examined thekinks by using energy dispersive spectroscopy andY.Q. Chen et al. / Chemical...

Iron catalytic growth of prism shaped single crystal silicon nanowires by chemical vapor deposition of silane

... Iron-catalytic growth of prism-shaped single-crystal silicon nanowires by chemical vapor deposition of silaneChen Lia,b,1, Chi Gua,b,1, Zengtao Liua,b, ... 2005AbstractSingle-crystal silicon nanowires with the prism structures were synthesized by chemical vapor deposition of SiH4gas at 450 °C.Fe particles which were located at the tip of the CNTs were ... Manyeﬀorts have been made to prepare silicon nanowires (SiNWs) by diﬀerent methods, such as laser ablation[6,7], thermal evaporation deposition [8], chemical vapor deposition (CVD) [9–11], and supercritical...

Deposition of carbon nanotubes on si nanowires by chemical vapor deposition

... Deposition of carbon nanotubes on Si nanowires by chemical vapor deposition Y.F. Zhang, Y.H. Tang, Y. Zhang, C.S. Lee, I. Bello, S.T. Lee*Center of Super-Diamond & ... SiCcan be formed by carbon atoms diusing into theSi NWs, CNTs could not be formed very well onthe surface of nanowires because of both thevolume change of the nanowires and breaking of the carbon ... nanoscalematerials to synthesize a composite of CNTs andSiNWs in transversal. Here, we report the syn-thesis of this composite material by a hot ®lament chemical vapor deposition (HFCVD) method.The results...

Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism

... HRTEM image of Si nanowire using Au. (d) HRTEM image of Si nanowire using Pt. Both were single crystal. (e) EDS line mapping of Si nanowires using Au catalyst. (f) EDS line mapping of Si nanowires ... Au, without loss of components by chemical reactionor evaporation. Thus, it has been demonstrated that Pt is a stablecatalyst for the VLS mechanism. The growth rate of Si nanowires with Au ... with Au.2. Experimental Silicon nanowires were fabricated by the conventional CVD pro-cess using silicon tetrachloride (SiCl4) as a precursor. Using an E-beam evaporator, Si (111) wafers...

Morphology and growth mechanism study of self assembled silicon nanowires synthesized by thermal evaporation

... study of self-assembled silicon nanowires synthesized by thermal evaporationZ. Zhang1, X.H. Fan, L. Xu, C.S. Lee, S.T. Lee*Center of Super-Diamond and Advanced Films & Department of Physics ... ther-mal evaporation [14±17] are two methods nor-mally used for the synthesis of SiNWs. The keypoint in these two methods is the formation of asucient amount of silicon atoms and/or silicon oxide ... gas phase from the target powders of silicon or silicon oxide by laser ablation or hightemperature evaporation. A growth mechanismfor these two cases is the vapor liquid±solid (VLS)model, in...

Characterization of tin catalyzed silicon nanowires synthesized by the hydrogen radical assisted deposition method

... Characterization of Tin-catalyzed silicon nanowires synthesized by the hydrogenradical-assisted deposition methodMinsung Jeon⁎, Hisashi Uchiyama, Koichi KamisakoDepartment of Electronic and ... been synthesized by using various methods,such as chemical vapor deposition (CVD) [9], oxide-assisted [10],template-assisted [11] and laser ablation method [12] via well-known vapor liquid–solid ... 2008Available online 9 October 2008Keywords:Tin catalyst Silicon nanowires Hydrogen radicalsVLS mechanismPhase diagramTin-catalyzed silicon nanowires (SiNWs) were synthesized at various hydrogen...

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

... crystalline silicon nanowires (SiNWs) with a diameter of ∼30 nm and length of tens of micrometers onAl2O3templates and silicon wafers were synthesized by the thermal evaporation of silicon monoxide ... 134www.elsevier.com/locate/physe Silicon nanowires fabricated by thermal evaporation of silicon monoxideJunjie Niua, Jian Shaa; b, Deren Yanga;∗aState Key Lab of Silicon Materials, Zhejiang ... synthesized largequantity of uniform crystalline SiNWs on Al2O3templates and silicon wafers by thermal evaporation of silicon monoxide (SiO) at 1100◦C, respectively.The results of the scanning electron...

Carbon assisted synthesis of silicon nanowires

... synthesis of Si nanowires, devoid of metallic impurities.Fig. 3. (a) TEM image of a Si nanojunction obtained by procedure (i) with Si:C ratio of 1:1. (b) TEM image of a nanowire obtained by procedure ... SiNWs obtained by procedure (i) with a Si:C ratio of 1:1, (c) SiNWs obtained by procedure (i) with Si:C ratio of 1:0.5 and (d) SiNWs obtained in the grey portion of the sample synthesized by procedure ... char-acteristic of cubic silicon with a small impurity of silica.Reaction of silicon powder with activated car-bon in the absence of H2, by procedure (ii), yieldedabundant quantities of SiNWs....

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