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Large scale synthesis, characterization and photoluminescence properties of amorphous silica nanowires by thermal evaporation of silicon monoxide

Large scale synthesis, characterization and photoluminescence properties of amorphous silica nanowires by thermal evaporation of silicon monoxide

Large scale synthesis, characterization and photoluminescence properties of amorphous silica nanowires by thermal evaporation of silicon monoxide

... Large- scale synthesis, characterization and photoluminescence properties of amorphous silica nanowires by thermal evaporation of silicon monoxide Sanjay K. Srivastavaa,Ã, ... 2009PACS:61.46.–w81.07.–bKeywords: Silicon monoxide Silicon oxide nanowires Thermal evaporation Photoluminescence abstractA single step non-catalytic process based on thermal evaporation of silicon monoxide has beenestablished ... this paper, we report large- scale synthesis of pure silica (SiO2) nanowires by a non-catalytic approach based on thermal evaporation of SiO under argon ambient with traces of oxygen.The process...
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Photoluminescence and growth mechanism of amorphous silica nanowires by vapor phase transport

Photoluminescence and growth mechanism of amorphous silica nanowires by vapor phase transport

... 218–223 Photoluminescence and growth mechanism of amorphous silica nanowires by vapor phase transportY. Yanga, B.K. Taya, X.W. Suna,Ã, H.M. Fanb, Z.X. ShencaSchool of Electrical and Electronic ... 2006Abstract Amorphous silica [SiOxð1oxo2Þ] nanowires were fabricated on silicon substrate in an acidic environment by heating the mixture of ZnCl2, and VO2powders at 1100 1C. The length of SiOx nanowires ... Ga and Sn, and transport gases such as O2, and H2, are often introducedinto the reaction. In this paper, we shall report a catalyst-assisted synthesis of amorphous silica nanowires by vaporphase...
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Direct growth of amorphous silica nanowires by solid state transformation of sio2 films

Direct growth of amorphous silica nanowires by solid state transformation of sio2 films

... titanium and nitrogen were detected by the EELS in the nanowires. The carbon on the shell is supplied by thermal decom-position of CH4 by nickel. No carbon shells were ob-served from the silica nanowires ... state reaction with silica (SiO2) films on silicon wafers to provide silicon atoms into growing nanowires. The TiN layers induce the diffusion of silicon and oxygen to the surface by a stress gradient ... nucleation site for the a-SiONWgrowth, and expedite the reduction of TiN by supply-ing extra hydrogen by thermal decomposition of Fig. 1. FESEM photographs of a-SiONWs nanowires grown on the substrates...
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Preparation and photoluminescence properties of amorphous silica nanowires

Preparation and photoluminescence properties of amorphous silica nanowires

... Preparation and photoluminescence properties of amorphous silica nanowires X.C. Wu*, W.H. Song, K.Y. Wang, T. Hu, B. Zhao, Y.P. Sun, J.J. DuLaboratory of Internal Friction and Defects in ... of the nanowires at a diameter of 60±110 nm and a length up to hundreds micrometers. Besides most smooth-surface polyp-shaped nanowires, two other forms of nanowires, named amoeba-shaped and frog-egg-shaped ... oxidized porous silicon and annealed SiO2[15]. The PL spectrum is alsodierent from that of oxidized Si nanowires [16].The growth process of the nanowires can beexplained by the vapor±liquid±solid...
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Silicon nanowires fabricated by thermal evaporation of silicon monoxide

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

... silicon nanowires (SiNWs) with a diameter of ∼30 nm and length of tens of micrometers onAl2O3templates and silicon wafers were synthesized by the thermal evaporation of silicon monoxide ... synthesized large quantity of uniform crystalline SiNWs on Al2O3templates and silicon wafers by thermal evaporation of silicon monoxide (SiO) at 1100◦C, respectively.The results of the scanning ... 134www.elsevier.com/locate/physe Silicon nanowires fabricated by thermal evaporation of silicon monoxide Junjie Niua, Jian Shaa; b, Deren Yanga;∗aState Key Lab of Silicon Materials, Zhejiang...
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Sulfide assisted growth of silicon nano wires by thermal evaporation of sulfur powders

Sulfide assisted growth of silicon nano wires by thermal evaporation of sulfur powders

... surfaceoxidation of nanowires. This suggests that the nanowires were composed of silicon and silicon oxide as sheath. Actually, some SiNWs could beoxidized to be silicon oxide nanowires because of the ... 2004Abstract Silicon nanowires (SiNWs) with a diameter of B20 nm were synthesized by the thermal evaporation of sulfur powders on silicon wafers. The source of the SiNWs came from the silicon substrates. ... form silicon sulfides by the reaction with silicon, canalso be used to assist the growth of SiNWs. Inprinciple, all of silicon compounds, such as silicon sulfide shown in this paper and silicon...
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Temperature-Controlled Growth of Silicon-Based Nanostructures by Thermal Evaporation of SiO Powders

Temperature-Controlled Growth of Silicon-Based Nanostructures by Thermal Evaporation of SiO Powders

... Temperature-Controlled Growth of Silicon- Based Nanostructures by Thermal Evaporation of SiO PowdersZ. W. Pan,†Z. R. Dai,†L. Xu,‡S. T. Lee,‡,* and Z. L. Wang*,†,§School of Materials Science and Engineering, ... the nucleation and growth of Si nanowires. The growthmechanism of Si nanowires from thermal evaporation of SiOpowders, however, is not fully understood. Thus, more detailed and systematic experimental ... length of the Si core is only one-third to one-half of the entire length of the wire, and the rest of the wire is pure amorphous silicon oxide.We also investigated the cross section of the hard...
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large - scale synthesis and gas sensing application of vertically

large - scale synthesis and gas sensing application of vertically

... observation of large- area uniformdouble-sided nanorodarrays formedby self-assemblyand fusion of urchin-like nanostructures has been reported. Scheme 1 shows theschematics of the formation process of ... absorp-tion band gap energy. Two regions with a linear relationship areobserved in the ranges of 3.5–4.2eV and 5.0–6.0 eV, respectively,giving two Egvalues of 2.77 eV and 2.26eV. The band gap of 2.77 ... conductionband). However, the band gap of 2.77 eV is much lower than thereported directband gapsof WO3. Theband edgeposition for amor-phous WO3in contact with an aqueous electrolyte at a pH of...
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Tài liệu Psychometric properties of the quality of life scale Child Health and Illness Profile-Child Edition in a combined analysis of five atomoxetine trials pdf

Tài liệu Psychometric properties of the quality of life scale Child Health and Illness Profile-Child Edition in a combined analysis of five atomoxetine trials pdf

... manuscriptediting and support.Conflict of interest The study was sponsored by Eli Lilly and Company. AS and RE are employees and shareholders of Eli Lilly and Company. RE and TW were employees of Eli Lilly and ... psychometric properties of the generic quality of life (QoL) scale ChildHealth and Illness Profile-Child Edition (CHIP-CE) by means of a combined analysis of atomoxetine clinical trialsin children and ... 349123ORIGINAL ARTICLEPsychometric properties of the quality of life scale Child Health and Illness Profile-Child Edition in a combined analysis of fiveatomoxetine trialsAlexander Schacht•Rodrigo Escobar•Thomas...
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A simple large scale synthesis of very long aligned silica nanowires

A simple large scale synthesis of very long aligned silica nanowires

... simple large- scale synthesis of very long aligned silica nanowires J.Q. Hu1, Y. Jiang, X.M. Meng, C.S. Lee, S.T. Lee*Department of Physics and Materials Science, Center of Super-Diamond and ... spectroscopy, and photoluminescence. The obtained SiO2 nanowires had no metal contaminations, ultralong lengths of millimeters, and most diameters of $50 nm. The PLspectra of the SiO2 nanowires ... an important candidatematerial, silica (SiO2), particularly its synthesis and optical properties, has been actively studiedfor a long time. The photoluminescence (PL) band of bulk SiO2or...
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