Growth of silicon nanowires on UV structurable glass using self organized nucleation centres

... Physica E 38 (2007) 40–43 Growth of silicon nanowires on UV- structurable glass using self- organized nucleation centres K. Tonischa,Ã, F. Weisea, M. Stubenraucha, V. ... possibility of having grown silica or silicon nitrideinstead of pure silicon nanowires. However, the nanowires and the photostructurable glass were expected to containmainly silicon and oxygen. ... accomplished on UV- structurable glass without pre-deposition of any catalyst. These kinds of glasses alreadycontain different ions like Ce, Ag, Sb, Sn (Li, Na, and K).By a heat pre-treatment of the UV- structurable...

Investigation of au and in as solvents for the growth of silicon nanowires on si(1 1 1)

... investigation of Au and In as solventsfor the growth of silicon nanowires on Si(1 1 1) via PVD bymeans of the well-known vapor–liquid–solid (VLS) me-chanism will be presented. Silicon nanowires ... thecontact area between indium and silicon. This leads tolarger droplets compared to those on the silicon oxidesurface.The size and distribution of gold and indium droplets on the silicon surface ... therefore reasonablyexplained considering the inﬂuence of solubilities andsurface energies on the mechanism of formation of dropletswith or without desorption step. Silicon nanowires were...

Effect of tunneling current on the growth of silicon islands on si(111) surfaces with a scanning tunneling microscope

... direction. The late-stage after the creation of islands with the STM, theaccumulation of silicon atoms on the tip apex wasgrowth rate was about three times lower than theearly-stage growth ... distinguish mechanisms of the early stageand late stage of island growth. At the late stage,the transfer of silicon atoms from the STM tip byre-evaporation of the silicon that was accumulated ... Results and discussion on the STM tip at the initial stages of the tip–sample interaction very likely occurs in the growth The reproducible formation of the 3D silicon islands on the Si(111) surface...

Growth of silicon nanostructures on graphite

... Computer simulations; Growth; Scanning tunneling microscopy; Silicon; Sputter deposition1. Introduction clusters by Honig [14], several experimental inves-tigations on silicon clusters have ... observa-the step edge. A combination of armchair andtions on the growth of Si nanostructures on HOPGzigzag directions in the 2D-graphite hexagonalas follows. The average silicon coverage varies bynetwork ... atomic resolution.structure [3–13]. Since the earliest study on silicon Dinh et al. [27,28], in the context of an investiga-tion of the optical properties of passivated Si* Corresponding author....

Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism

... when using Fig. 1. Synthesis of Si nanowires using Au and Pt as catalysts. (a) Vertically-aligned Si nanowires using Au. (b) Vertically-aligned Si nanowires using Pt. Si nanowires using Ptare longer ... those for nanowires fabri-cated with Au.2. Experimental Silicon nanowires were fabricated by the conventional CVD pro-cess using silicon tetrachloride (SiCl4) as a precursor. Using an E-beam ... dependence of the growth rate on the reactant vapourconcentration is not in itself evidence that any of them is therate-determining step. Rather, it simply reﬂects the dependence of the growth rate on...

Oriented silicon nanowires on silicon substrates from oxide assisted growth and gold catalysts

... 3. (a) Variation of wire density and diameter as a function of deposition temperature. (b) Histogram of diameter distribution of SiNWs and Au particle tips. (c) Growth direction of SiNWs depositedat ... Oriented silicon nanowires on silicon substrates fromoxide-assisted growth and gold catalystsYuan Yaoa, Fanghua Lib, Shuit-Tong Leea,*aCenter of Super-Diamond and Advanced Films ... (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong,Tat Chee Avenue, Kowloon, Hong Kong SAR, ChinabInstitute of Physics and Center for Condensed Matter Physics,...

A study in the growth mechanism of silicon nanowires with or without metal catalyst

... anisotropic growth of SiNW with a crystallinestructure. A catalyst particle provides a site for absorption of vapor-phase silicon atoms. The continuous absorption induces the supersat-uration of the ... formed liquid alloy with silicon atoms, which leads to nucleation and growth of a SiNW [19]. Therefore, the diameter andlocation of the SiNW are determined by the features of the catalystparticle ... results in formation of only a few of SiNWs. Thereaction temperature is usually decided with the consideration of thecatalyst type. According to the binary phase diagram of a metal and Si,the...

Effect of the presence of coexisting substances on UV inactivation of Cryptosporidium parvum oocysts

... been conducted on the effects of UV irradiation on C. parvum than on bacteria and viruses because UV irradiation was not considered to be effective in inactivating C. parvum based on results of ... added to suspensions of C. parvum oocysts and the efficacy of UV irradiation in inactivating the oocysts was studied. Substances added and conditions of UV irradiation in each of the 13 experiments ... addition, we evaluated the effects of humin or kaoline, which adhere to the surface of C. parvum oocysts, on the degree of UV inactivation of C. parvum oocysts using in vitro excystation and...

Carbon assisted synthesis of silicon nanowires

... corresponding to the (1 1 1) planes of silicon. The crystallinity of the nanowires is con-siderably higher when only argon was used instead of a mixture of argon and hydrogen. The role of hydrogen ... XRDpattern of the product, given in Fig. 2b, is char-acteristic of cubic silicon with a small impurity of silica.Reaction of silicon powder with activated car-bon in the absence of H2, by ... (iii), a silicon substrate was usedas the source of silicon. The Si(1 0 0) substrateswere cleaned by ultrasonication in distilled water.Amorphous carbon was sputtered on the sub-strates using...

Optical spectroscopy of silicon nanowires

... xðqÞÞ2þðC0=2Þ2; ð1Þwhere xðqÞ is the phonon dispersion function, q isthe normalized phonon momentum, C0is thenatural phonon linewidth of crystalline silicon, and D is the size of crystal. Eq. (1) was used ... scattering spectra of theSiNWs and crystal silicon. A very sharp andFig. 1. A typical SEM image of the morphology of aligned silicon nanowires of uniform diameter distribution on a silicasubstrate.Fig. ... theoreticalprediction, visible light emission due to size con-ﬁnement can occur only when the mean size of theSi crystalline is less than that of free exciton of silicon. Therefore, these two peaks are not con-sidered...

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