... Processing, Tsinghua University,
Beijing 100084, China
Received 18 April 2001; in ®nal form 13 June 2001
Abstract
Various Si and SiO
x
x 1 to 2 nanostructures were formed via a thermal evaporation ... Si and SiO
x
nanostructures formed via thermal evaporation
Yong-jun Chen
*
, Jian-bao Li, Jin-hui Dai
Department of Materials Science and Engineering, State Key...
... the
formation of Si nanowires by thermal evaporation
of pure SiO [23] or mixed Si SiO
2
[24] powders.
Similarly, in our case a possible reaction route
leading to the nucleation of the Si nanostructures
is ... taken collecting the Si 2p photoelectrons corresponding to elemental Si (Si) and SiO
2
(SiO2)
components and C 1s photoelectrons (C). The left and right panels show...
... considerable efforts have
been placed on the synthesis and characterization of those
materials over the past several years.
Silicon (Si) and silica (SiO
x
) nanostructures have
attracted considerable ... visible region.
Gaussian fitti ng analysis showed that the broad emission
band was a superimposition of two major peaks at 428 and
469 nm, respectively. The similar blue emission with...
... made of a Si core and a SiO
2
sheath.
The one-dimensional growth of SiNWs is facili-
tated by the SiO
2
sheath that con®nes the lateral
growth of SiNWs, and the high absorptivity for
Si O clusters ... SiNWs deposited on Si at about 1000°C.
(a) SiNWs are connected and grown radially outward from the
surface of the particle: and (b) some SiNWs show preferred
growth directions from...
... crystalline Si embedded in SiO
2
outer shell was
observed unlike some earlier reports on growth of Si nanowires by
SiO evaporation [23], the concept that SiO first disproportionate
into Si and SiO
2
to ... 2009
PACS:
61.46.–w
81.07.–b
Keywords:
Silicon monoxide
Silicon oxide nanowires
Thermal evaporation
Photoluminescence
abstract
A single step non-catalytic process based on the...
... high pure and expensive carbon nanotube or the
hazardous and easily explosive silicon (carbon) precursor of SiH
4
or SiCl
4
(CH
4
). In addition, the synthesized products were of low
yield and with ... can occur,
SiOðgÞþCOðgÞ!SiCðsÞþ2SiO
2
ðsÞ (9)
Since SiC has much higher melting point than SiO
2
, the
solidification of SiC occurs faster than that of SiO
2
and the
amorphous, viscous S...
... metal-
containing Si target
11-14
or metal-free Si/ SiO
2
target,
11,15
and
thermal evaporation of Si- SiO
2
mixture
11,16,17
or SiO pow-
ders.
11,18
Among these techniques, the thermal evaporation technique
developed ... present study is
SiO, we assume that the nucleation of the Si particle occurs on
the Si substrate by decomposition of SiO described by 2SiO )
Si + SiO
2...
... apoptosis. J Biol Chem 277, 47991–
48001.
11 Lee KK, Ohyama T, Yajima N, Tsubuki S & Yonehara
S (2001) MST, a physiological caspase substrate, highly
sensitizes apoptosis both upstream and ... promotes apoptosis in conjunction with sal-
vador and warts. Cell 114, 445–456.
21 Udan RS, Kango-Singh M, Nolo R, Tao C & Halder G
(2003) Hippo promotes proliferation arrest and apopto-
s...
... 2006
Abstract
Amorphous silicon oxide (SiO
x
) nanowires were directly grown by thermal processing of Si substrates. Au and Pd–Au thin films with
thicknesses of 3 nm deposited on Si (0 0 1) substrates ... heated Au deposited Si
(0 0 1) [Au /Si] and Pd–Au deposited Si (0 0 1) [Pd–Au /Si]
substrates in the tube furnace. As shown in Fig. 1(a),Au
nanoislands with diameters of 10–80...
... SiNWs.
20 30 40 50 60 70 80
500
1000
1500
2000
2500
3000
SiO
2
Al
2
O
3
Si
¦Ã-Al
2
O
3
Al(220)
Si( 331)
Si( 400)
Si( 311)
Si( 220)
Si( 111)
Intensity
2 Theta (degree)
Fig. 3. XRD spectrum of the SiNWs ... crystalline silicon nanowires (SiNWs) with a diameter of ∼30 nm and length of tens of micrometers on
Al
2
O
3
templates and silicon wafers were synthesized by the thermal evapo...